*For representation only.
ISC009N06NM6ATMA1
| Mfr. No: | ISC009N06NM6ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs OptiMOS 6 Power Transistor, 60 V |
| Lifecycle: | Active |
| Datasheet: | ISC009N06NM6ATMA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta), 344A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 0.9mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 118µA |
| Gate Charge (Qg) (Max) @ Vgs | 121 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8300 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 221W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty |
9,552
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 52 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
The ISC009N06NM6ATMA1 from Infineon Technologies falls under the mosfets category. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 40A (Ta), 344A (Tc), drive voltage: 8V, 10V and rds on (max) @ id, vgs: 0.9mOhm @ 50A, 10V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. ISC009N06NM6ATMA1 is available through Simplytronix, sourced and verified for authenticity.
