| Mfr. No: | ISC019N08NM7ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs OptiMOS 7 n-channel power MOSFET 80 V in SuperSO8 |
| Datasheet: | ISC019N08NM7ATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 209A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 87µA |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5633 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 188W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-43 |
| Package / Case | 8-PowerTDFN |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 18 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The ISC019N08NM7ATMA1 from Infineon Technologies falls under the mosfets category. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 26A (Ta), 209A (Tc), drive voltage: 7V, 10V and rds on (max) @ id, vgs: 1.9mOhm @ 50A, 10V. This part has a typical lead time of 18 Days from factory and ships with a full manufacturer datasheet available for download. ISC019N08NM7ATMA1 is available through Simplytronix, sourced and verified for authenticity.