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ISG0613N04NM6HSCATMA1 Infineon Technologies
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ISG0613N04NM6HSCATMA1

Mfr. No: ISG0613N04NM6HSCATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs IFX FET 40V
Lifecycle: Active
Datasheet: ISG0613N04NM6HSCATMA1 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 42A (Ta), 299A (Tc)
Rds On (Max) @ Id, Vgs 0.88mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 780µA
Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 20V
Power - Max 3W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 10-PowerWDFN
Supplier Device Package PG-WHITFN-10-1
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,235
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The ISG0613N04NM6HSCATMA1, made by Infineon Technologies, belongs to the mosfets product category. This part is specified with technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 42A (Ta), 299A (Tc) and rds on (max) @ id, vgs: 0.88mOhm @ 50A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks ISG0613N04NM6HSCATMA1 for same-day shipping with genuine parts guaranteed.

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