*For representation only.
BGAP2S30AE6327XTSA1
| Mfr. No: | BGAP2S30AE6327XTSA1 |
| Mfr.: | Infineon Technologies |
| Category: | RF Amplifier |
| Description: | RF Amplifier WIRELESS INFRASTRUCTURE |
| Lifecycle: | Active |
| Datasheet: | BGAP2S30AE6327XTSA1 Datasheet (PDF) |
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Specifications
| Frequency | 3.3GHz ~ 4.2GHz |
| P1dB | 28.5dBm |
| Gain | 35dB |
| Noise Figure | 3.2dB |
| RF Type | 4G, 5G |
| Voltage - Supply | 4.75V ~ 5.25V |
| Current - Supply | 121mA |
| Test Frequency | 3.6GHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 16-WFDFN Exposed Pad |
| Supplier Device Package | PG-TSNP-16-13 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
6,156
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | RF Amplifier |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8542330000 |
| USHTS | 8542330001 |
| TARIC | 8542330000 |
| MXHTS | 8542330299 |
| ECCN | 5A991.g |
ℹ
Product Overview
Manufactured by Infineon Technologies, the BGAP2S30AE6327XTSA1 is classified under rf amplifier. Technical specifications for this part include frequency: 3.3GHz ~ 4.2GHz, p1db: 28.5dBm, gain: 35dB, noise figure: 3.2dB, RF type: 4G, 5G and voltage, supply: 4.75V ~ 5.25V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Get BGAP2S30AE6327XTSA1 from Simplytronix, shipped same day with a genuine parts guarantee.
