| Mfr. No: | BSC155N06NDATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs IFX FET 60V |
| Datasheet: | BSC155N06NDATMA1 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 30V |
| Power - Max | 50W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 63 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
BSC155N06NDATMA1 is a mosfets part produced by Infineon Technologies for use across a range of applications. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 20A (Tc) and rds on (max) @ id, vgs: 15.5mOhm @ 17A, 10V. This part has a typical lead time of 63 Days from factory and ships with a full manufacturer datasheet available for download. Order BSC155N06NDATMA1 from Simplytronix for authenticated stock and same-day order processing.