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| Mfr. No: | BSS138IXUSA1 |
| Mfr.: | Infineon Technologies |
| Description: | SMALL SIGNAL MOSFETS |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 230mA, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 26µA |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 32 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23-3-U03 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
BSS138IXUSA1 is a component part produced by Infineon Technologies for use across a range of applications. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 230mA (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 3.5Ohm @ 230mA, 10V. This part has a typical lead time of 112 Days from factory. Order BSS138IXUSA1 from Simplytronix for authenticated stock and same-day order processing.