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BSS139IXUSA1

Mfr. No: BSS139IXUSA1
Mfr.: Infineon Technologies
Description: SMALL SIGNAL MOSFETS
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-SOT23-3-U03
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,898
Units In Stock
📦 Reel
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🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 56 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
ECCN EAR99
ℹ Product Overview

The BSS139IXUSA1 from Infineon Technologies falls under the component category. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 250 V, current, continuous drain (id) @ 25°C: 100mA (Ta), drive voltage: 0V, 10V and rds on (max) @ id, vgs: 14Ohm @ 100mA, 10V. This part has a typical lead time of 56 Days from factory. BSS139IXUSA1 is available through Simplytronix, sourced and verified for authenticity.

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