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BSS84IXUSA1 Infineon Technologies
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BSS84IXUSA1

Mfr. No: BSS84IXUSA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs Small Signal MOSFET, -60 V
Lifecycle: Active
Datasheet: BSS84IXUSA1 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta), 290mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5Ohm @ 180mA, 10V
Vgs(th) (Max) @ Id 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 0.78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23 pF @ 30 V
FET Feature -
Power Dissipation (Max) 400mW (Ta), 960mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-SOT23-3-U03
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,277
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 56 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

Manufactured by Infineon Technologies, the BSS84IXUSA1 is classified under mosfets. Key specifications include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 180mA (Ta), 290mA (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 5.5Ohm @ 180mA, 10V. This part has a typical lead time of 56 Days from factory and ships with a full manufacturer datasheet available for download. Get BSS84IXUSA1 from Simplytronix, shipped same day with a genuine parts guarantee.

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