Search Products

Menu
FF6MR20W2M1HB70BPSA1 Infineon Technologies
*For representation only.

FF6MR20W2M1HB70BPSA1

Mfr. No: FF6MR20W2M1HB70BPSA1
Mfr.: Infineon Technologies
Description: CoolSiC MOSFET half-bridge module 2000 V
Lifecycle: Active
Datasheet: FF6MR20W2M1HB70BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C 160A (Tj)
Rds On (Max) @ Id, Vgs 8.1mOhm @ 160A, 18V
Vgs(th) (Max) @ Id 5.15V @ 112mA
Gate Charge (Qg) (Max) @ Vgs 780nC @ 3V
Input Capacitance (Ciss) (Max) @ Vds 24100pF @ 1200V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 15
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,676
Units In Stock
📦 Tray
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

FF6MR20W2M1HB70BPSA1 is a component part produced by Infineon Technologies for use across a range of applications. It features technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 2000V (2kV), current, continuous drain (id) @ 25°C: 160A (Tj) and rds on (max) @ id, vgs: 8.1mOhm @ 160A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order FF6MR20W2M1HB70BPSA1 from Simplytronix for authenticated stock and same-day order processing.

Similar Products