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GS-065-008-1-L-MR Infineon Technologies
*For representation only.

GS-065-008-1-L-MR

Mfr. No: GS-065-008-1-L-MR
Mfr.: Infineon Technologies
Category: GaN FETs
Description: GaN FETs LEGACY GAN SYSTEMS
Lifecycle: Active
Datasheet: GS-065-008-1-L-MR Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 225mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id 1.4V @ 1.74mA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 6 V
Vgs (Max) +7V, -10V
Input Capacitance (Ciss) (Max) @ Vds 52 pF @ 400 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 250
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement IGLR65R200D2XUMA
10,272
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

GS-065-008-1-L-MR is a gan fets component manufactured by Infineon Technologies. It features FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 8A (Tc), drive voltage: 6V and rds on (max) @ id, vgs: 225mOhm @ 2.2A, 6V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers GS-065-008-1-L-MR in stock, verified authentic and ready for same-day dispatch.

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