| Mfr. No: | GS-065-060-5-B-A-MR |
| Mfr.: | Infineon Technologies |
| Category: | GaN FETs |
| Description: | GaN FETs Automotive 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled |
| Lifecycle: | Discontinued |
| Datasheet: | GS-065-060-5-B-A-MR Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 18A, 6V |
| Vgs(th) (Max) @ Id | 2.6V @ 16.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 6 V |
| Vgs (Max) | +7V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 516 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | - |
| Package / Case | 6-SMD, No Lead |
| Packaging | Reel |
| Standard Pack Qty | 250 |
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's GS-065-060-5-B-A-MR is a widely used gan fets part in electronic designs. Its datasheet lists FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 60A (Tc), drive voltage: 6V and rds on (max) @ id, vgs: 32mOhm @ 18A, 6V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies GS-065-060-5-B-A-MR with same-day shipping and guaranteed authenticity.