*For representation only.
IAUC60N04S6N031HATMA1
| Mfr. No: | IAUC60N04S6N031HATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs MOSFET_(20V 40V) |
| Datasheet: | IAUC60N04S6N031HATMA1 Datasheet (PDF) |
⚙
Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1922pF @ 25V |
| Power - Max | 75W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-56 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
12,134
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 182 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
IAUC60N04S6N031HATMA1 is a mosfets part produced by Infineon Technologies for use across a range of applications. This component is defined by technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 60A (Tj) and rds on (max) @ id, vgs: 3.1mOhm @ 30A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order IAUC60N04S6N031HATMA1 from Simplytronix for authenticated stock and same-day order processing.
