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IAUCN04S7L023HATMA1 Infineon Technologies
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IAUCN04S7L023HATMA1

Mfr. No: IAUCN04S7L023HATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs 40 V, N-Ch, 2.34 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
Datasheet: IAUCN04S7L023HATMA1 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Rds On (Max) @ Id, Vgs 2.34mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 1.8V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2518pF @ 20V
Power - Max 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-56
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,867
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

IAUCN04S7L023HATMA1 is a mosfets part produced by Infineon Technologies for use across a range of applications. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel, FET feature: Logic Level Gate, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 100A (Tj) and rds on (max) @ id, vgs: 2.34mOhm @ 50A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order IAUCN04S7L023HATMA1 from Simplytronix for authenticated stock and same-day order processing.

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