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IAUCN10S7L040ATMA1 Infineon Technologies
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IAUCN10S7L040ATMA1

Mfr. No: IAUCN10S7L040ATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs OptiMOS 7 Power-Transistor
Datasheet: IAUCN10S7L040ATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 131A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.95mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 66µA
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 4004 pF @ 50 V
FET Feature -
Power Dissipation (Max) 142W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-34
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,830
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies's IAUCN10S7L040ATMA1 is a widely used mosfets part in electronic designs. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 18A (Ta), 131A (Tj), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 3.95mOhm @ 60A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IAUCN10S7L040ATMA1 with same-day shipping and guaranteed authenticity.

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