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IDH08G65C6XKSA1 Infineon Technologies
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IDH08G65C6XKSA1

Mfr. No: IDH08G65C6XKSA1
Mfr.: Infineon Technologies
Category: SiC Schottky Diodes
Description: SiC Schottky Diodes SIC DIODES
Lifecycle: Not For New Designs
Datasheet: IDH08G65C6XKSA1 Datasheet (PDF)
⚙ Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 8 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 27 µA @ 420 V
Capacitance @ Vr, F 401pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement IDH08G65C5XKSA2
11,987
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 364 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
MXHTS 8541100101
ECCN EAR99
ℹ Product Overview

The IDH08G65C6XKSA1 from Infineon Technologies falls under the sic schottky diodes category. This component is defined by technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 20A, voltage, forward (vf) (max) @ if: 1.35 V @ 8 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. IDH08G65C6XKSA1 is available through Simplytronix, sourced and verified for authenticity.

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