*For representation only.
IGI60L1414B1MXUMA1
| Mfr. No: | IGI60L1414B1MXUMA1 |
| Mfr.: | Infineon Technologies |
| Category: | GaN FETs |
| Description: | GaN FETs 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode |
| Datasheet: | IGI60L1414B1MXUMA1 Datasheet (PDF) |
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Specifications
| Output Configuration | Half Bridge |
| Applications | DC Motors, General Purpose |
| Interface | - |
| Load Type | Capacitive and Resistive |
| Technology | NMOS |
| Rds On (Typ) | 140mOhm LS, 140mOhm HS |
| Current - Output / Channel | 6A |
| Current - Peak Output | 23A |
| Voltage - Supply | 10V ~ 20V |
| Voltage - Load | 600V (Max) |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Grade | - |
| Qualification | - |
| Features | Bootstrap Circuit |
| Fault Protection | UVLO |
| Mounting Type | Surface Mount |
| Package / Case | 27-PowerTFLGA |
| Supplier Device Package | PG-TFLGA-27-2 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
3,829
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8542399000 |
| USHTS | 8542390090 |
| MXHTS | 8542399999 |
| ECCN | EAR99 |
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Product Overview
The IGI60L1414B1MXUMA1 from Infineon Technologies falls under the gan fets category. Notable characteristics of this part include output configuration: Half Bridge, applications: DC Motors, General Purpose, interface: -, load type: Capacitive and Resistive, technology: NMOS and rds on: 140mOhm LS, 140mOhm HS. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. IGI60L1414B1MXUMA1 is available through Simplytronix, sourced and verified for authenticity.
