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IGI60L2727B1MXUMA1 Infineon Technologies
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IGI60L2727B1MXUMA1

Mfr. No: IGI60L2727B1MXUMA1
Mfr.: Infineon Technologies
Category: GaN FETs
Description: GaN FETs 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Lifecycle: Active
Datasheet: IGI60L2727B1MXUMA1 Datasheet (PDF)
⚙ Specifications
Output Configuration Half Bridge (3)
Applications DC Motors, DC-DC Converters
Interface PWM
Load Type Capacitive and Resistive
Technology Gallium Nitride (GaN) FETs
Rds On (Typ) 270mOhm LS, 270mOhm HS
Current - Output / Channel 4.8A
Current - Peak Output 9A
Voltage - Supply 10V ~ 20V
Voltage - Load 600V (Max)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Features Bootstrap Circuit
Fault Protection UVLO
Mounting Type Surface Mount
Package / Case 27-PowerTFLGA
Supplier Device Package PG-TFLGA-27-2
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,824
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8542390090
MXHTS 8542399999
ECCN EAR99
ℹ Product Overview

The IGI60L2727B1MXUMA1, made by Infineon Technologies, belongs to the gan fets product category. Notable characteristics of this part include output configuration: Half Bridge (3), applications: DC Motors, DC-DC Converters, interface: PWM, load type: Capacitive and Resistive, technology: Gallium Nitride (GaN) FETs and rds on: 270mOhm LS, 270mOhm HS. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IGI60L2727B1MXUMA1 for same-day shipping with genuine parts guaranteed.

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