| Mfr. No: | IGK120B041SXTSA1 |
| Mfr.: | Infineon Technologies |
| Category: | GaN FETs |
| Description: | GaN FETs CoolGaN Bidirectional Switch |
| Datasheet: | IGK120B041SXTSA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 5A, 5V |
| Vgs(th) (Max) @ Id | 2.9V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.4 nC @ 5 V |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 15W (Tc) |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SG-UFWLB-16-2 |
| Package / Case | 16-UFBGA, WLBGA |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | GaN FETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's IGK120B041SXTSA1 is a widely used gan fets part in electronic designs. Technical specifications for this part include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 30A (Tc), drive voltage: 5V and rds on (max) @ id, vgs: 12mOhm @ 5A, 5V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IGK120B041SXTSA1 with same-day shipping and guaranteed authenticity.