| Mfr. No: | IGLD60R070D1AUMA3 |
| Mfr.: | Infineon Technologies |
| Category: | GaN FETs |
| Description: | GaN FETs HV GAN DISCRETES |
| Lifecycle: | Obsolete |
| Datasheet: | IGLD60R070D1AUMA3 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-LSON-8-1 |
| Package / Case | 8-LDFN Exposed Pad |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | |
| Suggested Replacement | IGLD65R055D2AUMA |
| Category | GaN FETs |
| RoHS | |
| Lifecycle | Restricted Availability |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
IGLD60R070D1AUMA3 is a gan fets part produced by Infineon Technologies for use across a range of applications. This part is specified with FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 15A (Tc), drive voltage: - and rds on (max) @ id, vgs: -. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order IGLD60R070D1AUMA3 from Simplytronix for authenticated stock and same-day order processing.