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IGLD60R070D1AUMA3 Infineon Technologies
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IGLD60R070D1AUMA3

Mfr. No: IGLD60R070D1AUMA3
Mfr.: Infineon Technologies
Category: GaN FETs
Description: GaN FETs HV GAN DISCRETES
Lifecycle: Obsolete
Datasheet: IGLD60R070D1AUMA3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 400 V
FET Feature -
Power Dissipation (Max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-LSON-8-1
Package / Case 8-LDFN Exposed Pad
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement IGLD65R055D2AUMA
11,214
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS
Lifecycle Restricted Availability
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

IGLD60R070D1AUMA3 is a gan fets part produced by Infineon Technologies for use across a range of applications. This part is specified with FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 15A (Tc), drive voltage: - and rds on (max) @ id, vgs: -. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order IGLD60R070D1AUMA3 from Simplytronix for authenticated stock and same-day order processing.

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