| Mfr. No: | IMBG120R008M2HXTMA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package |
| Datasheet: | IMBG120R008M2HXTMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 189A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 89.9A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 28.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 18 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6380 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 800W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-12 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's IMBG120R008M2HXTMA1 is a widely used sic mosfets part in electronic designs. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 189A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 7.7mOhm @ 89.9A, 18V. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IMBG120R008M2HXTMA1 with same-day shipping and guaranteed authenticity.