| Mfr. No: | IMBG65R022M1HXTMA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SILICON CARBIDE MOSFET |
| Lifecycle: | Not For New Designs |
| Datasheet: | IMBG65R022M1HXTMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 41.1A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 12.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2288 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-12 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Alternate Packaging | |
| Suggested Replacement | IMBG65R020M2HXTM |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 364 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The IMBG65R022M1HXTMA1 from Infineon Technologies falls under the sic mosfets category. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 64A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 30mOhm @ 41.1A, 18V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. IMBG65R022M1HXTMA1 is available through Simplytronix, sourced and verified for authenticity.