| Mfr. No: | IMW40R036M2HXKSA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs SILICON CARBIDE MOSFET |
| Datasheet: | IMW40R036M2HXKSA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 400 V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 45.7mOhm @ 11.1A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 200 V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-U06 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 240 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
IMW40R036M2HXKSA1 is a mosfets component manufactured by Infineon Technologies. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 400 V, current, continuous drain (id) @ 25°C: 46A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 45.7mOhm @ 11.1A, 18V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IMW40R036M2HXKSA1 in stock, verified authentic and ready for same-day dispatch.