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IMYR140R029M2HXLSA1 Infineon Technologies
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IMYR140R029M2HXLSA1

Mfr. No: IMYR140R029M2HXLSA1
Mfr.: Infineon Technologies
Category: SiC MOSFETs
Description: SiC MOSFETs SIC DISCRETE
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1400 V
Current - Continuous Drain (Id) @ 25°C 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 29mOhm @ 27.3A, 18V
Vgs(th) (Max) @ Id 5.1V @ 8.6mA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 288W (Tc)
Operating Temperature -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-18
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,439
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 315 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IMYR140R029M2HXLSA1, a sic mosfets part used in electronic assemblies. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1400 V, current, continuous drain (id) @ 25°C: 71A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 29mOhm @ 27.3A, 18V. This part has a typical lead time of 315 Days from factory. You can source IMYR140R029M2HXLSA1 through Simplytronix, with fast shipping and verified authenticity.

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