*For representation only.
IPG16N10S461AATMA1
| Mfr. No: | IPG16N10S461AATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs MOSFET_(75V 120V( |
| Datasheet: | IPG16N10S461AATMA1 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 16A |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 9µA |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
| Power - Max | 29W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
4,400
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 18 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
IPG16N10S461AATMA1 is a mosfets component manufactured by Infineon Technologies. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 16A and rds on (max) @ id, vgs: 61mOhm @ 16A, 10V. This part has a typical lead time of 18 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IPG16N10S461AATMA1 in stock, verified authentic and ready for same-day dispatch.
