| Mfr. No: | IQE065N10NM5CGATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs IFX FET >80 - 100V |
| Datasheet: | IQE065N10NM5CGATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 85A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 48µA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TTFN-9-1 |
| Package / Case | 8-PowerTDFN |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 147 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8542390090 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
IQE065N10NM5CGATMA1 is a mosfets part produced by Infineon Technologies for use across a range of applications. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 14A (Ta), 85A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 6.5mOhm @ 20A, 10V. This part has a typical lead time of 147 Days from factory and ships with a full manufacturer datasheet available for download. Order IQE065N10NM5CGATMA1 from Simplytronix for authenticated stock and same-day order processing.