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IRF5801TRPBF Infineon Technologies
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IRF5801TRPBF

Mfr. No: IRF5801TRPBF
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs MOSFT 200V 0.6A 2200mOhm 3.9nC
Lifecycle: Active
Datasheet: IRF5801TRPBF Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 88 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,301
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 98 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Infineon Technologies's IRF5801TRPBF is a widely used mosfets part in electronic designs. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 200 V, current, continuous drain (id) @ 25°C: 600mA (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 2.2Ohm @ 360mA, 10V. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IRF5801TRPBF with same-day shipping and guaranteed authenticity.

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