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IRFB3206GPBFXKMA1

Mfr. No: IRFB3206GPBFXKMA1
Mfr.: Infineon Technologies
Description: IR FET UP TO 60V
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6540 pF @ 50 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,564
Units In Stock
📦 Reel
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🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
ℹ Product Overview

Manufactured by Infineon Technologies, the IRFB3206GPBFXKMA1 is classified under component. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 120A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 3mOhm @ 75A, 10V. This part has a typical lead time of 126 Days from factory. Get IRFB3206GPBFXKMA1 from Simplytronix, shipped same day with a genuine parts guarantee.

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