| Mfr. No: | ISG0613N04NM6HSCATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs IFX FET 40V |
| Lifecycle: | Active |
| Datasheet: | ISG0613N04NM6HSCATMA1 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Ta), 299A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 780µA |
| Gate Charge (Qg) (Max) @ Vgs | 104nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 20V |
| Power - Max | 3W (Ta), 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 10-PowerWDFN |
| Supplier Device Package | PG-WHITFN-10-1 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The ISG0613N04NM6HSCATMA1, made by Infineon Technologies, belongs to the mosfets product category. This part is specified with technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 42A (Ta), 299A (Tc) and rds on (max) @ id, vgs: 0.88mOhm @ 50A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks ISG0613N04NM6HSCATMA1 for same-day shipping with genuine parts guaranteed.