*For representation only.
ISG0614N06NM5HSCATMA1
| Mfr. No: | ISG0614N06NM5HSCATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs IFX FET 60V |
| Datasheet: | ISG0614N06NM5HSCATMA1 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 233A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 86µA |
| Gate Charge (Qg) (Max) @ Vgs | 102nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400pF @ 30V |
| Power - Max | 3W (Ta), 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 10-PowerWDFN |
| Supplier Device Package | PG-WHITFN-10-1 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
9,240
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
ISG0614N06NM5HSCATMA1 is a mosfets part produced by Infineon Technologies for use across a range of applications. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 31A (Ta), 233A (Tc) and rds on (max) @ id, vgs: 1.6mOhm @ 50A, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Order ISG0614N06NM5HSCATMA1 from Simplytronix for authenticated stock and same-day order processing.
