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IXFA10N80P IXYS
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IXFA10N80P

Mfr. No: IXFA10N80P
Mfr.: IXYS
Category: MOSFETs
Description: MOSFETs 10 Amps 800V 1.1 Rds
Lifecycle: Active
Datasheet: IXFA10N80P Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263AA (IXFA)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging IXFA10N80P-TRL
Suggested Replacement
12,587
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 189 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541500000
MXHTS 85415001
ECCN EAR99
ℹ Product Overview

IXYS manufactures the IXFA10N80P, a mosfets part used in electronic assemblies. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 800 V, current, continuous drain (id) @ 25°C: 10A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 1.1Ohm @ 5A, 10V. This part has a typical lead time of 189 Days from factory and ships with a full manufacturer datasheet available for download. You can source IXFA10N80P through Simplytronix, with fast shipping and verified authenticity.

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