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IXFH50N50P3 IXYS
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IXFH50N50P3

Mfr. No: IXFH50N50P3
Mfr.: IXYS
Category: MOSFETs
Description: MOSFETs N-Channel: Power MOSFET w/Fast Diode
Lifecycle: Active
Datasheet: IXFH50N50P3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4335 pF @ 25 V
FET Feature -
Power Dissipation (Max) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,697
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 259 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

IXYS's IXFH50N50P3 is a widely used mosfets part in electronic designs. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 500 V, current, continuous drain (id) @ 25°C: 50A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 120mOhm @ 25A, 10V. This part has a typical lead time of 259 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IXFH50N50P3 with same-day shipping and guaranteed authenticity.

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