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IXFT50N50P3 IXYS
*For representation only.

IXFT50N50P3

Mfr. No: IXFT50N50P3
Mfr.: IXYS
Category: MOSFETs
Description: MOSFETs N-Channel: Power MOSFET w/Fast Diode
Datasheet: IXFT50N50P3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 0 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4335 pF @ 25 V
FET Feature -
Power Dissipation (Max) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,352
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541500000
MXHTS 85415001
BRHTS 85415020
ECCN EAR99
ℹ Product Overview

IXFT50N50P3 is a mosfets component manufactured by IXYS. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 500 V, current, continuous drain (id) @ 25°C: 50A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 120mOhm @ 25A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IXFT50N50P3 in stock, verified authentic and ready for same-day dispatch.

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