*For representation only.
IXTF6N200P3
| Mfr. No: | IXTF6N200P3 |
| Mfr.: | IXYS |
| Category: | MOSFETs |
| Description: | MOSFETs ISOPLUS 2KV 4A N-CH POLAR3 |
| Datasheet: | IXTF6N200P3 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 2000 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Package / Case | ISOPLUSi5-PAK™ |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 25 |
5,599
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 378 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
IXYS's IXTF6N200P3 is a widely used mosfets part in electronic designs. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 2000 V, current, continuous drain (id) @ 25°C: 4A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 4.2Ohm @ 3A, 10V. This part has a typical lead time of 378 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IXTF6N200P3 with same-day shipping and guaranteed authenticity.
