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MAPRST0912-50

Mfr. No: MAPRST0912-50
Mfr.: MACOM
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors 960-1215MHz 50W Gain: 9.1dB min
Datasheet: MAPRST0912-50 Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition -
Noise Figure (dB Typ @ f) -
Gain 10.16dB ~ 10.25dB
Power - Max 50W
DC Current Gain (hFE) (Min) @ Ic, Vce -
Current - Collector (Ic) (Max) 5.3A
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Package / Case -
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 20
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,112
Units In Stock
📦 Tray
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 196 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
ℹ Product Overview

MAPRST0912-50 is a rf bipolar transistors part produced by MACOM for use across a range of applications. Key specifications include transistor type: NPN, voltage, collector emitter breakdown: 65V, frequency, transition: -, noise figure: -, gain: 10.16dB ~ 10.25dB and power, max: 50W. This part has a typical lead time of 196 Days from factory and ships with a full manufacturer datasheet available for download. Order MAPRST0912-50 from Simplytronix for authenticated stock and same-day order processing.

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