| Mfr. No: | JANTXV2N3439 |
| Mfr.: | Microchip / Microsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 350V 1A 800mW Power BJT THT |
| Lifecycle: | Active |
| Datasheet: | JANTXV2N3439 Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Power - Max | 800 mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/368 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Packaging | Bulk |
| Standard Pack Qty | 1 |
| Category | Bipolar Transistors - BJT |
| RoHS | No |
| Lifecycle | |
| Lead Time | 350 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541290065 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
The JANTXV2N3439, made by Microchip / Microsemi, belongs to the transistors product category. Notable characteristics of this part include transistor type: NPN, current, collector (ic): 1 A, voltage, collector emitter breakdown: 350 V, vce saturation (max) @ ib, ic: 500mV @ 4mA, 50mA, current, collector cutoff: 2µA and DC current gain (hfe) (min) @ ic, vce: 40 @ 20mA, 10V. This part has a typical lead time of 350 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks JANTXV2N3439 for same-day shipping with genuine parts guaranteed.