| Mfr. No: | 2N3810A |
| Mfr.: | Microchip Technology |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 60V 50mA 350mW Dual Small-Signal BJT THT |
| Datasheet: | 2N3810A Datasheet (PDF) |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 100µA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Power - Max | 600mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Supplier Device Package | TO-78-6 |
| Packaging | Bulk |
| Standard Pack Qty | 1 |
| Category | Bipolar Transistors - BJT |
| RoHS | No |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Manufactured by Microchip Technology, the 2N3810A is classified under bipolar transistors - bjt. Notable characteristics of this part include transistor type: 2 PNP (Dual), current, collector (ic): 50mA, voltage, collector emitter breakdown: 60V, vce saturation (max) @ ib, ic: 250mV @ 1mA, 100µA, current, collector cutoff: 10nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 150 @ 1mA, 5V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Get 2N3810A from Simplytronix, shipped same day with a genuine parts guarantee.