| Mfr. No: | MSC017SMA120SDT/R |
| Mfr.: | Microchip Technology |
| Description: | MOSFET SIC 1200 V 17 mOhm TO-263-7 XL |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 136A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 5V @ 4.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 194 nC @ 20 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4274 pF @ 1200 V |
| FET Feature | - |
| Power Dissipation (Max) | 749W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | |
| Standard Pack Qty | 800 |
| Category | |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 98 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
MSC017SMA120SDT/R is a component component manufactured by Microchip Technology. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 136A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 22mOhm @ 40A, 20V. This part has a typical lead time of 98 Days from factory. Simplytronix offers MSC017SMA120SDT/R in stock, verified authentic and ready for same-day dispatch.
