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MSC025SMA330B4N Microchip Technology
*For representation only.

MSC025SMA330B4N

Mfr. No: MSC025SMA330B4N
Mfr.: Microchip Technology
Category: SiC MOSFETs
Description: SiC MOSFETs MOSFET SIC 3300V 25 mOhm TO-247-4 Notch
Lifecycle: Active
Datasheet: MSC025SMA330B4N Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 3300 V
Current - Continuous Drain (Id) @ 25°C 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 410 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 7080 pF @ 2400 V
FET Feature -
Power Dissipation (Max) 800W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,989
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 98 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

MSC025SMA330B4N is a sic mosfets component manufactured by Microchip Technology. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 3300 V, current, continuous drain (id) @ 25°C: 106A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 31mOhm @ 40A, 20V. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers MSC025SMA330B4N in stock, verified authentic and ready for same-day dispatch.

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