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MSC030SMB120SDT/R Microchip Technology
*For representation only.

MSC030SMB120SDT/R

Mfr. No: MSC030SMB120SDT/R
Mfr.: Microchip Technology
Category: SiC MOSFETs
Description: SiC MOSFETs MOSFET SIC 1200 V 30 mOhm TO-263-7 XL Full Reel
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 40mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 18 V
Vgs (Max) 18V
Input Capacitance (Ciss) (Max) @ Vds 2201 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,713
Units In Stock
📦
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 98 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290055
ECCN EAR99
ℹ Product Overview

As a sic mosfets component, the MSC030SMB120SDT/R is manufactured and supplied by Microchip Technology. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 69A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 40mOhm @ 15A, 18V. This part has a typical lead time of 98 Days from factory. Simplytronix carries MSC030SMB120SDT/R in stock, backed by a genuine parts guarantee and quick dispatch.

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