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MSC090SMA070SDT/R Microchip Technology
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MSC090SMA070SDT/R

Mfr. No: MSC090SMA070SDT/R
Mfr.: Microchip Technology
Category: SiC MOSFETs
Description: SiC MOSFETs MOSFET SIC 700 V 90 mOhm TO-263-7 XL
Lifecycle: Active
Datasheet: MSC090SMA070SDT/R Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 112mOhm @ 15A, 20V
Vgs(th) (Max) @ Id 5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 806 pF @ 700 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,907
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS
Lifecycle
Lead Time 123 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

MSC090SMA070SDT/R is a sic mosfets part produced by Microchip Technology for use across a range of applications. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 700 V, current, continuous drain (id) @ 25°C: 34A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 112mOhm @ 15A, 20V. This part has a typical lead time of 123 Days from factory and ships with a full manufacturer datasheet available for download. Order MSC090SMA070SDT/R from Simplytronix for authenticated stock and same-day order processing.

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