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MSC360SMA120SDT/RM Microchip Technology
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MSC360SMA120SDT/RM

Mfr. No: MSC360SMA120SDT/RM
Mfr.: Microchip Technology
Category: SiC MOSFETs
Description: SiC MOSFETs MOSFET SIC 1200 V 360 mOhm TO-263-7L XL
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 20V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 258 pF @ 1200 V
FET Feature -
Power Dissipation (Max) 92W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging
Standard Pack Qty 100
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,735
Units In Stock
📦
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 98 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The MSC360SMA120SDT/RM, made by Microchip Technology, belongs to the sic mosfets product category. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 12A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 450mOhm @ 5A, 20V. This part has a typical lead time of 98 Days from factory. Simplytronix stocks MSC360SMA120SDT/RM for same-day shipping with genuine parts guaranteed.

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