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MSCSM120XM50CTYZBNMG Microchip Technology
*For representation only.

MSCSM120XM50CTYZBNMG

Mfr. No: MSCSM120XM50CTYZBNMG
Mfr.: Microchip Technology
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-6HPD
Lifecycle: Active
Datasheet: MSCSM120XM50CTYZBNMG Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel (3-Phase Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 49A (Tc), 80A (Tc)
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.7V @ 2mA, 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 137nC @ 20V, 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 1000V, 3020pF @ 1000V
Power - Max 196W (Tc), 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,560
Units In Stock
📦
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8504409580
JPHTS 850440090
TARIC 8504409590
ECCN EAR99
ℹ Product Overview

MSCSM120XM50CTYZBNMG is a discrete semiconductor modules component manufactured by Microchip Technology. It features technology: Silicon Carbide (SiC), configuration: 6 N-Channel (3-Phase Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 49A (Tc), 80A (Tc) and rds on (max) @ id, vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers MSCSM120XM50CTYZBNMG in stock, verified authentic and ready for same-day dispatch.

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