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MSCSM330AM07CD3NG Microchip Technology
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MSCSM330AM07CD3NG

Mfr. No: MSCSM330AM07CD3NG
Mfr.: Microchip Technology
Category: MOSFET Modules
Description: MOSFET Modules PM-MOSFET-SIC-SBD-D3
Datasheet: MSCSM330AM07CD3NG Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C 295A (Tc)
Rds On (Max) @ Id, Vgs 7.8mOhm @ 300A, 20V
Vgs(th) (Max) @ Id 2.7V @ 28mA
Gate Charge (Qg) (Max) @ Vgs 1640nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 35000pF @ 2.64kV
Power - Max 1918W (Tc)
Operating Temperature -40°C ~ 175°C
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,397
Units In Stock
📦
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
ℹ Product Overview

The MSCSM330AM07CD3NG from Microchip Technology falls under the mosfet modules category. Key specifications include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 3300V (3.3kV), current, continuous drain (id) @ 25°C: 295A (Tc) and rds on (max) @ id, vgs: 7.8mOhm @ 300A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. MSCSM330AM07CD3NG is available through Simplytronix, sourced and verified for authenticity.

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