*For representation only.
MSCSM330DUM07CD3NG
| Mfr. No: | MSCSM330DUM07CD3NG |
| Mfr.: | Microchip Technology |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules PM-MOSFET-SIC-SBD-D3 |
| Lifecycle: | Active |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 3300V (3.3kV) |
| Current - Continuous Drain (Id) @ 25°C | 295A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 300A, 20V |
| Vgs(th) (Max) @ Id | 2.7V @ 28mA |
| Gate Charge (Qg) (Max) @ Vgs | 1640nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 35000pF @ 2.64kV |
| Power - Max | 1918W (Tc) |
| Operating Temperature | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 1 |
14,176
Units In Stock
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- Global shipping
- Genuine parts guaranteed
Test report available upon request —
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
MSCSM330DUM07CD3NG is a mosfet modules part produced by Microchip Technology for use across a range of applications. Among its key specs are technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 3300V (3.3kV), current, continuous drain (id) @ 25°C: 295A (Tc) and rds on (max) @ id, vgs: 7.8mOhm @ 300A, 20V. This part has a typical lead time of 0 Days from factory. Order MSCSM330DUM07CD3NG from Simplytronix for authenticated stock and same-day order processing.
