| Mfr. No: | TN0106N3-G-P003 |
| Mfr.: | Microchip Technology |
| Category: | MOSFETs |
| Description: | MOSFETs N-Channel DMOS FET Low Threshold 2.0V |
| Lifecycle: | Active |
| Datasheet: | TN0106N3-G-P003 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 500µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Alternate Packaging | TN0106N3-G |
| Suggested Replacement | TN0106N3-G |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 28 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541290065 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
Manufactured by Microchip Technology, the TN0106N3-G-P003 is classified under mosfets. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 350mA (Tj), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 3Ohm @ 500mA, 10V. This part has a typical lead time of 28 Days from factory and ships with a full manufacturer datasheet available for download. Get TN0106N3-G-P003 from Simplytronix, shipped same day with a genuine parts guarantee.