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TN0106N3-G-P003 Microchip Technology
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TN0106N3-G-P003

Mfr. No: TN0106N3-G-P003
Mfr.: Microchip Technology
Category: MOSFETs
Description: MOSFETs N-Channel DMOS FET Low Threshold 2.0V
Lifecycle: Active
Datasheet: TN0106N3-G-P003 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 500µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging TN0106N3-G
Suggested Replacement TN0106N3-G
6,857
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 28 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541210000
USHTS 8541290065
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

Manufactured by Microchip Technology, the TN0106N3-G-P003 is classified under mosfets. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 350mA (Tj), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 3Ohm @ 500mA, 10V. This part has a typical lead time of 28 Days from factory and ships with a full manufacturer datasheet available for download. Get TN0106N3-G-P003 from Simplytronix, shipped same day with a genuine parts guarantee.

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