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TN0110N3-G-P002 Microchip Technology
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TN0110N3-G-P002

Mfr. No: TN0110N3-G-P002
Mfr.: Microchip Technology
Category: MOSFETs
Description: MOSFETs N-CH Enhancmnt Mode MOSFET
Datasheet: TN0110N3-G-P002 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 500µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging TN0110N3-G
Suggested Replacement
8,871
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 28 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541900000
USHTS 8541290065
JPHTS 8542900006
TARIC 8541900000
MXHTS 8541900299
ECCN EAR99
ℹ Product Overview

Microchip Technology manufactures the TN0110N3-G-P002, a mosfets part used in electronic assemblies. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 350mA (Tj), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 3Ohm @ 500mA, 10V. This part has a typical lead time of 28 Days from factory and ships with a full manufacturer datasheet available for download. You can source TN0110N3-G-P002 through Simplytronix, with fast shipping and verified authenticity.

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