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MSC017SMA120B4N Microchip Technology
*For representation only.

MSC017SMA120B4N

Mfr. No: MSC017SMA120B4N
Mfr.: Microchip Technology
Category: SiC MOSFETs
Description: SiC MOSFETs MOSFET SIC 1200 V 17 mOhm TO-247-4 Notch
Datasheet: MSC017SMA120B4N Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 119A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 22mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 5V @ 4.5mA
Gate Charge (Qg) (Max) @ Vgs 194 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 4274 pF @ 1200 V
FET Feature -
Power Dissipation (Max) 577W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,734
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 217 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by Microchip Technology, the MSC017SMA120B4N is classified under sic mosfets. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 119A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 22mOhm @ 40A, 20V. This part has a typical lead time of 217 Days from factory and ships with a full manufacturer datasheet available for download. Get MSC017SMA120B4N from Simplytronix, shipped same day with a genuine parts guarantee.

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