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MSC020SMB120SDT/RM Microchip Technology
*For representation only.

MSC020SMB120SDT/RM

Mfr. No: MSC020SMB120SDT/RM
Mfr.: Microchip Technology
Category: SiC MOSFETs
Description: SiC MOSFETs MOSFET SIC 1200 V 20 mOhm TO-263-7 XL Mini Reel
Datasheet: MSC020SMB120SDT/RM Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 27mOhm @ 23A, 18V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 136 nC @ 18 V
Vgs (Max) 18V
Input Capacitance (Ciss) (Max) @ Vds 3314 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 416W (Tc)
Operating Temperature -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging
Standard Pack Qty 100
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,958
Units In Stock
📦
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 98 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290055
ECCN EAR99
ℹ Product Overview

MSC020SMB120SDT/RM is a sic mosfets component manufactured by Microchip Technology. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 97A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 27mOhm @ 23A, 18V. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers MSC020SMB120SDT/RM in stock, verified authentic and ready for same-day dispatch.

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