*For representation only.
MSC060SMB120SDT/RM
| Mfr. No: | MSC060SMB120SDT/RM |
| Mfr.: | Microchip Technology |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs MOSFET SIC 1200 V 60 mOhm TO-263-7 XL Mini Reel |
| Datasheet: | MSC060SMB120SDT/RM Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 8A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 18 V |
| Vgs (Max) | +21V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1143 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 100 |
10,437
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 98 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
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Product Overview
Microchip Technology's MSC060SMB120SDT/RM is a widely used sic mosfets part in electronic designs. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 38A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 80mOhm @ 8A, 18V. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies MSC060SMB120SDT/RM with same-day shipping and guaranteed authenticity.
