*For representation only.
MSC080SMA120SDT/R
| Mfr. No: | MSC080SMA120SDT/R |
| Mfr.: | Microchip Technology |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs MOSFET SIC 1200 V 80 mOhm TO-263-7 XL |
| Datasheet: | MSC080SMA120SDT/R Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 15A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 20 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 838 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 182W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
10,258
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | 77 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
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Product Overview
The MSC080SMA120SDT/R, made by Microchip Technology, belongs to the sic mosfets product category. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 35A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 100mOhm @ 15A, 20V. This part has a typical lead time of 77 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks MSC080SMA120SDT/R for same-day shipping with genuine parts guaranteed.
